MRF9030MBR1 Datasheet | Freescale Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030M/D The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband mercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, mon-source amplifier applications in 26 volt base station equipment. - Typical Performance at 945 MHz, 26 Volts Output Power - 30 Watts PEP Power Gain - 20 d B Efficiency - 41% (Two Tones) IMD - -31 d Bc - Integrated ESD Protection - Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW) Output Power - Excellent Thermal Stability - Characterized with Series Equivalent Large-Signal Impedance Parameters - Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. - TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. - TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC MRF9030MR1 MRF9030MBR1 945 MHz, 30 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 1265-08, STYLE 1 TO-270-2 PLASTIC MRF9030MR1 CASE 1337-03, STYLE 1 TO-272-2 PLASTIC MRF9030MBR1 Value 65 + 15, - 0.5 139 0.93 - 65 to +150 175 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 1.08 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model MRF9030MR1 MRF9030MBR1 Class 1 (Minimum) M2 (Minimum) C7 (Minimum) C6 (Minimum) MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22-A113 Rating 3 NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable...